Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Quantum information systems (joint session HL/TT)

HL 31.3: Talk

Wednesday, March 14, 2018, 15:30–15:45, EW 203

Engineering of Coherent Defects in Silicon Carbide with Varying Irradiation Methods — •Christian Kasper¹, Victor Soltamov¹, Dmitrij Simin¹, Takeshi Ohshima², Vladimir Dyakonov^1,3, and Georgy Astakhov¹ — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²National Institutes for Quantum and Radiological Science and Technology, Takasaki, Japan — ³Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg

Out of the many possible material systems, quantum centers in silicon carbide (SiC) have proven themselves to be promising candidates for qubits [1]. Whereas a wide availability and easy handling are crucial for a functioning device, long-preserving spin coherence is also essential for such systems [2]. By using the pulsed-ODMR technique we compare the coherence properties of silicon vacancies created with two common methods: Neutron and electron irradiation. Particularly, the spin-lattice relaxation time (T1) and spin coherence time (T2) are measured in a broad range of the silicon vacancy density for each of the two irradiation methods. Additionally, Ramsey-fringes were measured while selecting a coherent spin package by applying a second microwave frequency.

[1] D. Riedel et al., Phys. Rev. Lett. 109, 226402 (2012)

[2] Simin et al., Phys. Rev. B 95, 161201(R) (2017)