Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 31: Quantum information systems (joint session HL/TT)

HL 31.5: Vortrag

Mittwoch, 14. März 2018, 16:00–16:15, EW 203

Microwave saturation spectroscopy of silicon vacancies in SiC — •Victor Soltamov¹, Christian Kasper¹, Georgy V. Astakhov¹, Sergej A. Tarasenko², Alexander V. Poshakinskiy², Andrey N. Anisimov², Pavel G. Baranov², and Vladimir Dyakonov^1,3 — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²Ioffe Institute, 194021 St.Petersburg, Russia — ³Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg

Negatively charged silicon vacancy (V_Si) center in Silicon Carbide (SiC) has been attracting growing attention due to their use in quantum sensing with optical pumping [1]. The core of the sensing methods is to precise measurement of the optically detected magnetic resonance (ODMR) signal frequency shift, induced by the external fields. A sensitivity of the measurement improves when the V_Si ground-state microwave transitions are narrow. That is why, understanding of the mechanisms responsible for inhomogeneous broadening of the ODMR line is of great importance. To establish the mechanisms we provided the study of the V_Si ODMR linewidth by means of microwave saturation spectroscopy. We revealed the presence of two types of broadening namely induced by randomly distributed strain fields and by randomly distributed local magnetic fields. The results allowed deeper understanding of the V_Si ground spin state properties and to propose new measurement protocols for quantum sensing with the V_Si centers.

[1] H. Kraus et al., Sci. Rep. 4, 5303 (2014).