Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Quantum information systems (joint session HL/TT)

HL 31.9: Talk

Wednesday, March 14, 2018, 17:15–17:30, EW 203

Spin-orbit interaction isotropy for holes in rectangular Si nanowires — •Marko J. Rancic, Christoph Kloeffel, and Daniel Loss — Department of physics, University of Basel

In this study we develop a model describing holes in rectangular nanowires in silicon (Si). In similarity with cylindrical nanowires, an electric field of intermediate strength can induce a sizable direct Rashba spin-orbit interaction (DRSOI). Our findings suggest that the magnitude of DRSOI is isotropic in case of germanium (Ge) due to the high degree of symmetry which Ge has. In contrast to that DRSOI is highly anisotropic in Si, dependant on the growth direction of the Si nanowire with respect to the main crystallographic axes. Still the DRSOI in si can be made significant (∼ 0.5 meV) when the growth direction of the nanowire is chosen optimally, different to recent experimental studies.