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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Quantum information systems (joint session HL/TT)

Wednesday, March 14, 2018, 15:00–17:30, EW 203

15:00 HL 31.1 Input-output theory for spin-photon coupling in Si double quantum dots — •Mónica Benito, Xiao Mi, Jacob M. Taylor, Jason R. Petta, and Guido Burkard
15:15 HL 31.2 Synchronized high-fidelity quantum gates in Si/SiGe double quantum dots — •Maximilian Russ, D. M. Zajac, A. J. Sigillito, F. Borjans, J. M. Taylor, J. R. Petta, and Guido Burkard
15:30 HL 31.3 Engineering of Coherent Defects in Silicon Carbide with Varying Irradiation Methods — •Christian Kasper, Victor Soltamov, Dmitrij Simin, Takeshi Ohshima, Vladimir Dyakonov, and Georgy Astakhov
15:45 HL 31.4 Simulating high-fidelity two-qubit gates with singlet-triplet qubits generated by capacitive coupling and interqubit exchange interaction — •Michael Wolfe, Pascal Cerfontaine, Fernando Calderon-Vargas, Jason Kestner, and Hendrik Bluhm
16:00 HL 31.5 Microwave saturation spectroscopy of silicon vacancies in SiC — •Victor Soltamov, Christian Kasper, Georgy V. Astakhov, Sergej A. Tarasenko, Alexander V. Poshakinskiy, Andrey N. Anisimov, Pavel G. Baranov, and Vladimir Dyakonov
  16:15 15 min. break.
16:30 HL 31.6 Fabrication and Characterization of a Quantum Bus Prototype in Si/SiGe — •Inga Seidler, Arne Hollmann, Veit Langrock, Stefan Trellenkamp, Christian Neumann, Dominique Bougeard, Hendrik Bluhm, and Lars R. Schreiber
16:45 HL 31.7 Towards atomic vapor based memories for quantum dot single photons - A variable EIT delay in Cesium — •Tim Kroh, Esteban Gomez Lopez, Janik Wolters, Alexander Thoma, Stephan Reitzenstein, Joahnnes S. Wildmann, Rinaldo Trotta, Eugenio Zallo, Armando Rastelli, Oliver G. Schmidt, and Oliver Benson
17:00 HL 31.8 Theory of long-range coherent electron shuttling devices in Silicon/Silicon-Germanium quantum wells — •Veit Langrock, Arne Hollmann, Inga Seidler, Lars R. Schreiber, and David P. DiVincenzo
17:15 HL 31.9 Spin-orbit interaction isotropy for holes in rectangular Si nanowires — •Marko J. Rancic, Christoph Kloeffel, and Daniel Loss
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