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HL: Fachverband Halbleiterphysik

HL 32: Quantum dots and wires: Optical properties II

HL 32.2: Vortrag

Mittwoch, 14. März 2018, 15:15–15:30, A 151

Multi-particle electronic structure of In_1−xGa_xAs_ySb_1−y/GaP quantum dots — •Petr Klenovský^1,2, Petr Steindl^1,2, Elisa Maddalena Sala³, Benito Alén⁴, and Dieter Bimberg³ — ¹Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 2, 61137 Brno, Czech Republic — ²Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno, Czech Republic — ³Institut für Festkörperphysik Technische Universität Berlin, Hardenbergstraße 36 10623 Berlin, Germany — ⁴Instituto de Micro y Nanotecnología, IMN-CNM, CSIC Isaac Newton, 8 PTM Tres Cantos 28760 Madrid

We investigate the multi-exciton structure of InGaAsSb/GaP quantum dots for different Ga and As compositions using the configuration interaction method with basis single-particle states obtained within the envelope function approximation based on k.p method. Depending on the dot composition the system is found to be of type-I or type-II nature. The type of transition in case of electrons originating from Γ, L, and X points of k-space and holes from Γ is, furthermore, calculated for different excitation intensities. Obtained emission energies and oscillator strengths of the transitions are compared to results of pumping-dependent photoluminescence measurements.