Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 33: Poster Session III

HL 33.11: Poster

Wednesday, March 14, 2018, 17:30–19:30, Poster F

Optical and structural properties of latticed matched AlInN/GaN heterostructures — •Savutjan Sidik, Philipp Horenburg, Fedor Alexej Ketzer, Philipp Henning, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institute of Applied Physics, TU Braunschweig, Germany

It is well known that AlInN can be grown lattice-matched on c-plane GaN. In contrast, on non- and semipolar GaN surfaces, one-dimensional lattice matching can be achieved due to diffrent a/c lattice ratios. This opens up new opportunities to manipulate the strain states in the GaInN/GaN quantum well based light emitting diodes which are suffering from strongly reduced efficiencies towards longer wavelength emissions. However, the basic optical properties of AlInN are not yet well known which are of significant importance not only in accurate characterization of the optoelectronic devices but also in evaluation of the structural quality and homogeneity of the samples. In this contribution, we present first results on the optical investigation of lattice matched AlInN heterostructures grown by MOVPE on c-plane, m-plane and semipolar GaN buffer layers grown on various substrates. Photoluminescence spectroscopy is used to characterize the samples with 266 nm laser excitation in the temperature range of 5 K to 300 K. As an initial step, we observe strong polarization-dependent defect related AlInN emission from the sample grown on semipolar orientation at room temperature. An accurate analysis of the strain state of the epitaxial layers by high resolution XRD is combined with the optical characterization.