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HL: Fachverband Halbleiterphysik

HL 33: Poster Session III

HL 33.1: Poster

Mittwoch, 14. März 2018, 17:30–19:30, Poster F

Investigation of the effects of Mg-doping on the structural and electrical properties of(In,Ga)N/GaN superlattices — •Erdi Kuşdemir, Caroline Chèze, and Raffaella Calarco — Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany

Optimization of the p-type area is one of the challenges for the realization of more efficient light emitters based on group III-nitrides. A self-compensation mechanism limits the hole density in the Mg-doped (In, Ga)N layers usually constituting the p-type area. Instead of directly increasing the hole concentration on the topmost contact layer, the hole injection may be promoted by utilizing (In, Ga)N/GaN superlattices (SLs) neighboring the active region. To this aim, we investigate the influence of Mg on the structural and electrical properties of (In, Ga)N/GaN SLs and (In, Ga)N layers grown by PAMBE. SL samples with 10 periods of (In, Ga)N/GaN were fabricated at 610°C and doped with Mg at different steps of the period. In-situ monitoring of the In desorption by QMS indicated a decrease in In incorporation in the SLs with the amount of Mg supplied. XRD was employed to assess this effect, as well as the structural quality of the SLs. Significant improvement of the surface morphology was achieved by the SL formation compared to the random alloy. In addition, the electrical characterization confirmed the p-type nature of some of the SLs. Our results pave the way for improved hole injection efficiency in III-N emitters.

Financial support of this work within from the European Union program Horizon2020 under grant agreement No. 642574 (SPRInG) is gratefully acknowledged.