Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.21: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
In-situ atomic layer deposition of high-k dielectrics on MBE-grown GaAs — •Soraya Karimzadah1, Torsten Rieger1, Nils von den Driesch1, Lidai Kibkalo1, Gregor Mussler1,2, Detlev Grützmacher2, and Mihail Ion Lepsa2 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH & JARA-FIT, 52425 Jülich — 2Peter Grünberg intsitute (PGI-10), Forschungszentrum Jülich GmbH & JARA-FIT, 52425 Jülich
The deposition of high-k dielectrics on III-V compound semiconductors by atomic layer deposition (ALD) is a promising approach to fabricate gate oxides of Nano devices as well as surface passivation of nanowires (NWs). Employing ALD allows for conformal overgrowth of high aspect ratio structures such as NWs. Here, we have investigated the in-situ ALD of Al2O3 and HfO2 on MBE grown GaAs layers. The experiments were carried out in a state of the art multi-material cluster tool composed of UHV growth and deposition systems. The quality of the ALD layers was first determined. Later on, the in-situ deposition of Al2O3 and HfO2 on GaAs substrates has performed. The MBE-grown GaAs layers transferred directly to the ALD chamber without exposing the samples to air. In this way, the formation of the native oxide and other contamination on the GaAs surface is avoided improving the quality of the semiconductor interface.
The samples were characterized by Ellipsometry, XRR, AFM, RBS, TEM, and CV measurements. High quality high-k dielectrics on III-V semiconductors open the way to nanoscale devices.