Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.22: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
LH-HH Splitting in Ga(As,Bi) Semiconductor Alloys — •Frederik Otto1, Julian Veletas1, Lukas Nattermann2, Kerstin Volz2, and Sangam Chatterjee1 — 1Institute of Experimental Physics I, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany — 2Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Hans-Meerwein-Str., D-35032 Marburg, Germany
The dilute bismuthide III-V semiconductors are of great interest for a wide range of applications as they offer significant potential for band gap engineering. The anti-crossings of the isovanlent Bi level in the uppermost valence bands of the host material potentially allow for the suppression of non-radiative Auger recombination, thus enhancing radiative output characteristics important for the efficiency of semiconductor lasers. In addition, the incorporation of Bismuth causes a splitting of the heavy-hole (hh) and the light-hole (lh) bands at the Γ-point due to a reduction in tetrahedral symmetry of the zinc-blende structures. We investigate a series of Ga(As,Bi)-samples with varying Bismuth concentration and known strain grown by metal-organic vapor-phase epitaxy. We perform low-temperature photomodulation reflectance spectroscopy in order to get detailed information about the optical properties and to quantify the lifting of the hh-lh degeneracy at the Γ-point.