Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 33: Poster Session III

HL 33.24: Poster

Wednesday, March 14, 2018, 17:30–19:30, Poster F

Formation and characterization of shallow junction in GaAs made by ion implantation and ms-range flash lamp annealing — •juanmei duan and mao wang — Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany

With the demand of aggressive scaling in MOS device the further progress can be realized by integration of high mobility semiconductors with CMOS technology. III-V compound semiconductors are characterized not only by the high carrier mobility but most of them are also direct band gap semiconductors. In this paper we present the formation of shallow junctions in both p-type and n-type GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond-range flash lamp annealing (FLA). The distribution of implanted elements obtained by SIMS shows that the FLA process suppressed the diffusion of dopants and simultaneously the ms-range annealing is sufficient to recrystallize the implanted layer. The effective carrier concentration is in the range of 5*1018 cm-3 suggesting full activation of implanted elements. Formation of p-n and n-p junction is confirmed by current-voltage characteristics and photoluminescence spectroscopy where the main emission peak from the implanted GaAs layer exhibits red and blue shift, respectively. The observed shift is due to the Burstein-Moss-Effect. Moreover, the Raman active LO-like phonon mode in Zn doped GaAs exhibits a strong asymmetry on the left side due to a coupling with the plasmon mode. This is typical for p-type GaAs with a carrier concentration higher than 1018 cm-3.