Berlin 2018 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.2: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
Band offset at the Ga(N,As,P)/GaP Heterointerface — •Florian Dobener1,3, Sebastian Gies1, Robin C. Döring1, Kahkaber Jandieri1, Peter Ludewig2, Kerstin Volz1, Wolfgang Stolz1,2, Wolfram Heimbrodt1, and Sangam Chatterjee3 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany — 3Institute of Experimental Physics I, Justus-Liebig-University Giessen. D-35392 Gießen, Germany
The realization of monolithically integrated on-chip laser sources for optical data transmission remains to be one of the major goals of optoelectronic integration. The quaternary III-V material system Ga(N,As,P) promises to fulfil this task. Composition variations through the control of nitrogen and phosphorous incorporation allow for both, bandgap engineering, potentially covering the near-infrared regime as well as the telecom wavelength and matching the lattice constant to Si. Here, we investigate a series of Ga(N,As,P) multiple quantum well samples. The well thickness is varied while the composition is kept quasi-constant. The samples are examined by photoluminescence excitation spectroscopy. Besides higher states, we find two clear peaks slightly above the band-gap energy, which we attribute to the heavy-hole and light-hole valence band to conduction band energy transitions of the samples. Consequently, we are able to model the band offset at the Ga(N,As,P)/GaP heterointerface with a band anti-crossing model and the model solid theory.