Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.3: Poster
Mittwoch, 14. März 2018, 17:30–19:30, Poster F
Characterization of electro-chemical treated GaN-Nanowires — •René Couturier1, Jan Philipps1, Pascal Hille2, Jörg Schörmann1, Martin Eickhoff2, Sangam Chatterjee1, and Detlev Hofmann1 — 1I. Physikalisches Institut, Heinrich-Buff-Ring 16, Justus-Liebig-Universität-Gießen, D-35392-Gießen — 2Institute of Solid State Physics, Otto-Hahn-Allee NW1, University of Bremen, D-28359
Due to its large surface to volume ratio GaN nanowires show excellent properties for bio-sensing and water-splitting applications. Therefore, the optical, structural and electrochemical properties of photo-electrochemically treated and untreated GaN nanowires were investigated. The GaN nanowires ensembles were immersed in an aqueous phosphate buffered saline solution (PBS) and treated under various bias and illumination conditions. Photoluminescence measurements show that anodic biases induce a permanent decrease in the radiative recombination intensity. The structural properties of the treaded samples changed from free standing nanowires to more tilted structures, as can be seen in scanning microscopy images. We find that the effects are stronger for higher anodic biases and longer treatment times. Energy dispersive x-ray spectroscopy shows that the surface of the nitride nanowires is oxidized as a consequence of the treatments.