Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.32: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
CVD-growth and characterization of crystalline zinc oxide layers and nanowires — •Florian Huber, Anouk Puchinger, Waleed Ahmad, Manfred Madel, Sebastian Bauer, Raphael Müller, and Klaus Thonke — Institute of Quantum Matter / Semiconductor Physics Group, Ulm University
For the growth of zinc oxide (ZnO) by chemical vapor deposition (CVD), the commonly used graphite powder as reducing agent is replaced by the gaseous precursor methane (CH4). By this, the controllability of the growth processes can be significantly improved. Specifically the consumption of the source material (a commercially available ZnO powder) and the II-VI ratio can be varied very precisely.
Using this new growth method, high quality ZnO layers have been grown both on gallium nitride (GaN) substrates and on c-plane sapphire with an intermediate aluminum nitride (AlN) nucleation layer. By adjusting the growth conditions accordingly, it is possible to switch from layer growth to catalyst-free growth of ZnO nanowires on a-plane and c-plane sapphire. The excellent quality of the resulting material is proven by high resolution X-ray diffraction (HRXRD) measurements and low-temperature photoluminescence (PL) spectroscopy.
With the presented method high growth rates can be realized, while keeping the technical setup as simple as possible. Together with the high controllability and the low-cost precursors used, the method has great potential for industrial up-scaling.