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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.37: Poster
Mittwoch, 14. März 2018, 17:30–19:30, Poster F
Irradiation Effects on β-Ga2O3 Single Crystal: Vacancy vs. Optical Properties — •Chaoming Liu1, Yidan Wei1, Mao Wang2,3, Yonder Berencén2, Jianqun Yang1, Xingji Li1, and Shengqiang Zhou2 — 1Harbin Institute of Technology, School of Materials Science and Engineering, 150001, Harbin, China — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, D-01328, Dresden, Germany — 3Technische Universität Dresden, D-01062, Dresden, Germany
Monoclinic beta-phase gallium oxide (β-Ga2O3) is a versatile transparent conducting oxide with excellent chemical and thermal stability and a wide bandgap of 4.85 eV. In β-Ga2O3, vacancies play a crucial role, largely influencing the optical properties. However, the optical response induced by vacancy-engineering in β-Ga2O3 has so far been only investigated under quasi-stationary conditions. Therefore, the research on the dynamic correlation between the optical properties and vacancies of β-Ga2O3 is of great interests. In this work, n-type β-Ga2O3 single crystals are irradiated by 25 MeV O ions with different fluences to investigate the effect of vacancies. The correlation between the vacancy concentration and the optical properties is investigated by Raman spectra and photoluminescence experiments. We show that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are weakened to a certain extent upon increasing irradiation fluence. Moreover, the emission at the blue and green regions is enhanced upon raising the vacancy density, while the UV emission is strongly reduced.