Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.8: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
Optical properties of metamorphic semipolar group III-nitride quantum well structures — •Daniel Schmid1, Philipp Henning1, Philipp Horenburg1, Fedor Alexej Ketzer1, Heiko Bremers1, Uwe Rossow1, Florian Tendille2, Philippe De Mierry2, Philippe Vennéguès2, Jesús Zúñiga-Pérez2, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Centre de Recherche sur l’Hétéro-Epitaxie, Valbonne, France
In this contribution we discuss the carrier dynamics in semipolar (1122) quantum well structures. In particular we study the influence of reduced strain in metamorphic structures on recombination processes. For this purpose we control the strain of our samples with AlInN buffer layers to adjust our lattice parameters. Via temperature dependent time-resolved photoluminescence we took a deeper look into the relation between radiative and nonradiative recombination processes of thin (1.5 nm) metamorphic semipolar (1122) GaInN/GaN MQW structures. Our samples were grown with low pressure MOVPE on high quality pseudo bulk GaN substrates as well as on templates grown on patterned sapphire. We measured radiative lifetime of 0.32 ns at 5 K and 1.44 ns at RT. The non radiative lifetime of the sample grown on pseudo bulk GaN was higher compared to samples grown on patterned sapphire, which leads to the idea of fewer defects inside the QW and therefore less non radiative recombination centres. In addition we discuss the effect of the band structure as derived by k · p calculations.