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HL: Fachverband Halbleiterphysik
HL 35: Focussed Session: Metasurfaces II
HL 35.3: Vortrag
Donnerstag, 15. März 2018, 10:00–10:15, EW 201
Control of the Ge(Si) quantum dot emission by Mie resonances in silicon nanostructures — •Viktoriia Rutckaia1, Mihail Petrov2, Alexey Novikov3, Mikhail Shaleev3, Frank Heyroth4, and Joerg Schilling1 — 1Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Halle (Saale), Germany — 2Department of Nanophotonics and Metamaterials, ITMO University, St. Petersburg, Russia — 3Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS), 603950 Nizhniy Novgorod, Russia — 4Interdisciplinary center of material science, Martin-Luther-University Halle-Wittenberg, Halle (Saale), Germany
Light manipulation at the nanoscale can be achieved using all-dielectric resonant nanostructures. We show an active photonic system based on Ge(Si) quantum dots coupled to silicon nanodisks. We show that Mie resonances govern the enhancement of the photoluminescent signal from embedded quantum dots due to a good spatial overlap of the emitter position with the electric field of Mie modes. We identify the coupling mechanism, which allows for engineering the resonant Mie modes through the interaction of several nanodisks. In particular, the mode hybridization in a nanodisk trimer results in an up to 10-fold enhancement of the luminescent signal due to the excitation of resonant anti-symmetric magnetic and electric dipole modes. Results of the time-resolved measurements show the modification of the QD spontaneous emission rate governed by the Purcell effect in the Mie resonators.