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HL: Fachverband Halbleiterphysik

HL 36: Focussed Session: Frontiers in Laser Diode Physics I

HL 36.4: Vortrag

Donnerstag, 15. März 2018, 10:45–11:00, EW 202

Characteristics of InAsSb/GaAs submonolayer lasers — •David Quandt¹, Dejan Arsenijević¹, Dieter Bimberg¹, and André Strittmatter² — ¹Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany — ²Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg, Germany

The addition of Sb to the growth of InAs/GaAs submonolayer stacks results in a stronger charge carrier localization and a broader photoluminescence emission spectrum. Thereby an additional degree of freedom for the tailoring of the emission properties is gained. The static and dynamic characteristics of ridge-waveguide laser diodes containing submonolayer stacks with and without Sb have been investigated in detail. While the static characteristics show a slight degradation upon the addition of Sb, broader gain spectra and increased large signal modulation speeds could be realized.