Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Focussed Session: Frontiers in Laser Diode Physics I

HL 36.7: Vortrag

Donnerstag, 15. März 2018, 12:00–12:15, EW 202

High bandwidth versus high optical output power in 980 nm VCSELs — •Nasibeh Haghighi¹, Gunter Larisch¹, Ricardo Rosales¹, Martin Zorn², and James A. Lott¹ — ¹Technische Universtität Berlin, Berlin, Germany — ²JENOPTIK Diode Labs GmbH, Berlin, Germany

Vertical-cavity surface-emitting lasers (VCSELs) are a key optical source for modern and future high bit rate optical interconnects in data centers, supercomputers, and silicon photonic integrated circuits, and for data communications across multimode optical fiber and across free (terrestrial) space. We study the trade-offs in VCSEL design between high bandwidth and high optical output power. At room temperature with our small (about 4 micrometers and smaller) oxide-aperture diameter VCSELs we achieve record small-signal modulation bandwidths exceeding 34 gigahertz with single-mode optical output powers exceeding 4 milliwatts. In contrast with our large (about 10 micrometers and larger) oxide-aperture diameter VCSELs we achieve bandwidths exceeding 20 gigahertz with multiple-mode optical output powers up to about 30 milliwatts. We compare our VCSEL designs for use in example near-term practical applications including arrays for free-space data communications and as illumination and sensing sources for smart mobile telephones.