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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Oxide Semiconductors

HL 37.12: Talk

Thursday, March 15, 2018, 12:30–12:45, EW 203

Identification of switching modes in Y2O3 transition metal oxide RRAM devices — •Eszter Piros1, Stefan Petzold1, Benjamin Krah1, Sharath Sankaramangalam Ulhas1, Tom Blomberg2, Marko Tuominen2, Hessel Sprey3, Christian Wenger5, Eric Jalaguier4, Sophie Bernasconi4, Etienne Nowak4, Erwin Hildebrandt1, and Lambert Alff11Institute for Materials Science, Advanced Thin Film Technology, Technische Universität Darmstadt, Alarich-Weiss-Str. 2 D-64287 Darmstadt, Germany — 2ASM Microchemistry Ltd. Väinö Auerin katu 12 A, 00560 Helsinki, Finland — 3ASM Belgium NV Kapeldreef 7, 3001 Leuven, Belgium — 4CEA Leti 17 avenue des Martyrs, 38054 Grenoble, France — 5IHP Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Resistive random access memory (RRAM) devices offer a new solution to the current problems of scalable non-volatile data storage. Here we report the stabilized resistive switching modes [1] in yttrium oxide-based RRAM devices. In the bipolar device, stable intermediate resistance states are achieved by varying either the voltage sweep values during reset or by varying the compliance current in the set process. This opens up the possibility of multibit programming and neuromorphic applications. The conduction mechanism of bipolar and unipolar devices was also investigated. The high endurance that exceeds several hundred DC switching cycles and very good data retention (extrapolated to 10 years at 85C) make both bi- and unipolar devices suitable candidates for next generation non-volatile memory devices. [1] S. U. Sharath, Adv. Funct. Mater. 27, 1700432 (2017)

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