Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Oxide Semiconductors

HL 37.3: Talk

Thursday, March 15, 2018, 10:00–10:15, EW 203

Spray Coating of Transparent Oxide Semiconductors - β-Ga₂O₃, In₂O₃-Ga₂O₃-ZnO, and ZnO Thin Films — •Constance Schmidt, Axel Fechner, and Dietrich R.T. Zahn — Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany

Transparent, semiconducting materials offer new opportunities for optoelectronic devices, like flat panel displays. The most remarkable property of these transparent oxide semiconductors (TOSs) is their wide band gap (>3 eV). Besides established deposition methods like MBE and CVD, cost efficient preparation methods are of great interest. Spray coating, the deposition technique of our choice, is one of these cost efficient methods to prepare TOS thin films. Samples were prepared by spray coating using a solution containing Ga(NO₃)₃, Zn(NO₃)₂, and In₂O₃, Ga₂O₃, or ZnO. For Ga₂O₃ and ZnO we solved their nitrates in H₂O and Ethanol, for In₂O₃-Ga₂O₃-ZnO thin films we used isopropyl alcohol as solvent. N₂ is always used as carrier gas. Post annealing (300 ^∘C - 1300 ^∘C) needs to be applied to all thin films prepared. Optical respectively vibrational properties were studied using spectroscopic ellipsometry and Raman spectroscopy. X-ray diffraction was employed to investigate structural and phase purity. Topological and morphological characterization was performed using scanning electron microscopy. Finally, the conductivity was determined by the four-point probe method. It is demonstrated that high quality TOSs thin films using cost efficient spray coating.