Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: Oxide Semiconductors
HL 37.7: Vortrag
Donnerstag, 15. März 2018, 11:15–11:30, EW 203
Influence of parameters on the properties of pulsed radiofrequency magnetron sputtered Ga2O3 — •Philipp Schurig, Fabian Michel, Martin Becker, Angelika Polity, and Peter Klar — 1. Physikalisches Insitut und Zentrum für Materialforschung (LaMa), Justus-Liebig-Universität Giessen, Giessen, Deutschland
The advantages of high power impulse magnetron sputtering (HiPIMS) on the deposition of materials is well known, but a combining an impulse method with radio frequency sputtering is not straightforward. With Ga2O3 as a transparent oxide with a band gap of about 4.9 eV the influence of the duty cycle or the sputter power on the layer properties of pulsed radio frequency magnetron assisted sputtered films is investigated.
The idea behind this transfer is to be able to lower the growth temperature of about 650 ∘C for good quality Ga2O3 by increasing the particle energy. For industrial applications and flexible substrates high substrate temperatures are a drawback. HiPIMS studies [1] have shown that pulsed sputter deposition allows an increase of the coupled power and at the same time a decrease of the growth temperature without severe structural degradation of the material.
However, post growth annealing was still necessary and was executed at a temperature of 1000 ∘C in ambient atmosphere. Optical, crystallographic and compositional analysis was performed after deposition and thermal treatment.
E. Nakamura et al.: Appl. Phys. Lett. 104, (2014) 051121