Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: 2D materials: Chalcogenides II (joint session HL/DS)
HL 38.12: Vortrag
Donnerstag, 15. März 2018, 12:30–12:45, A 151
Effective passivation of ultra-thin layers of InSe to enhance electrical properties — •Himani Arora1,2, Younghun Jung3, Sanghoon Chae3, Daniel Rhodes3, Ghidewon Arefe3, Takashi Taniguchi4, James Hone3, and Artur Erbe1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany — 3Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA — 4Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
We report electrical properties of ultrathin layers of Indium Selenide (InSe), a member of the III-VI chalcogenides family, which has shown a mobility two orders of magnitude higher than MoS2, alongside better stability than black phosphorus.
InSe has light electron effective mass and high mobility enabling its usage for fast, high performance electronics. State-of-the-art InSe transistors reported so far, consist of 6 nm thick InSe flake contacted using graphene edge contacts and reaching a mobility of 1500 cm2V-1s-1 at RT in top-gate configuration. However, InSe being an air-sensitive material loses its conductance over time, resulting the transistor to become unfunctional.
In this study, we report an InSe-based transistor fully encapsulated in h-BN layers which enhanced its electrical properties compared to an un-encapsulated device. The transistor reached a high Hall mobility at RT, while retaining its performance for a long period of time.