Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 39: Group IV (other than C): Si/Ge/SiC
HL 39.1: Vortrag
Donnerstag, 15. März 2018, 11:00–11:15, EW 015
investigation of 3C-SiC/SiO2 interfacial point defects from first principles calculations and electron paramagnetic resonance measurements — •Taufik Adi Nugraha1,2, Martin Rohrmüller2, Uwe Gerstmann2, Siegmund Greulich-Weber3, Jean-Louis Cantin4, Jurgen von Bardeleben4, Wolfgang Gero Schmidt2, and Stefan Wippermann1 — 1Max-Planck-Institut für Eisenforschung — 2University of Paderborn — 3Solar Weaver GmbH — 4University Pierre and Marie Curie
SiC is widely used in high-power, high-frequency electronic devices. It has also been used as a building block in hybrid nanocomposites for photovoltaics. Analogous to Si, SiC features SiO2 as native oxide that can be used for passivation and insulating layers. However, a significant number of defect states are reported to form at SiC/SiO2 interfaces, limiting mobility and increasing recombination of free charge carriers. Combining ab initio g-tensor and hyperfine interactions calculations with electron paramagnetic resonance (EPR) measurements, we show that carbon antisite dangling bond (Csi-db) defects explain the measured EPR signatures. Csi-db is found to be strongly stabilized at the interface, because carbon changes its hybridization from sp3 in the SiC- bulk to sp2 at the interface, creating a dangling bond inside a porous region of the SiO2 passivating layer. The calculated energy level of a neutral Csi-db coincides with the barrier height of the interface states from internal photoemission (IPE) of SiC/SiO2 interfaces, indicating a contribution of Csi-db to the measured interface states.