Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 39: Group IV (other than C): Si/Ge/SiC
HL 39.5: Talk
Thursday, March 15, 2018, 12:00–12:15, EW 015
Sub-Bandgap Photoluminescence Study on Implantation-Induced Color Centers in 4H-SiC — •Maximilian Rühl, Christian Ott, Michael Krieger, and Heiko B. Weber — Department of Physics, Chair of Applied Physics, FAU Erlangen-Nürnberg, Germany
Silicon carbide (SiC) is a promising host material for novel quantum technology based on single photon sources such as color centers in crystals [1]. In this study, we report on low temperature photoluminescence (PL) spectra related to color centers created by proton implantation and subsequent annealing. Particularly, we monitor the dependence of PL spectra on the implantation dose and the annealing temperature in a wide parameter range. Among the well known defect signatures related to the silicon vacancy (VSi) defect and the carbon vacancy antisite (CSi-VC) defect we observe several omnipresent and highly temperature stable spectral lines (TS lines) three of which (at 768 nm, 811 nm and 813 nm) show strongly correlated PL intensities through all measurement parameters. This suggests a common underlying microscopic defect. Further, the intensities of the TS lines turn out to be clearly dependent on the initial implantation dose where the PL lines do not increase until an annealing temperature of 1200∘C. At this temperature the initially created VSi defects are basically annealed, hence the defect responsible for the TS signature could be a transformation product of the afore-mentioned.
[1] S. Castelletto et. al. nature materials 13, 151-156 (2013)