HL 39: Group IV (other than C): Si/Ge/SiC
Donnerstag, 15. März 2018, 11:00–13:00, EW 015
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11:00 |
HL 39.1 |
investigation of 3C-SiC/SiO2 interfacial point defects from first principles calculations and electron paramagnetic resonance measurements — •Taufik Adi Nugraha, Martin Rohrmüller, Uwe Gerstmann, Siegmund Greulich-Weber, Jean-Louis Cantin, Jurgen von Bardeleben, Wolfgang Gero Schmidt, and Stefan Wippermann
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11:15 |
HL 39.2 |
Towards room-temperature extended infrared Si-based photoresponse: A case study of Te-hyperdoped Si — •Mao Wang, Yonder Berencén, Slawomir Prucnal, Eric García-Hemme, René Hübner, Ye Yuan, Chi Xu, Lars Rebohle, Roman Böttger, René Heller, Harald Schneider, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
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11:30 |
HL 39.3 |
Crystal phase effects in group IV nanowire polytypes and their homojunctions — •Michele Amato
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11:45 |
HL 39.4 |
Shell-Thickness Controlled Semiconductor-Metal Transition in Si-SiC Core-Shell Nanowires — •Michele Amato
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12:00 |
HL 39.5 |
Sub-Bandgap Photoluminescence Study on Implantation-Induced Color Centers in 4H-SiC — •Maximilian Rühl, Christian Ott, Michael Krieger, and Heiko B. Weber
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12:15 |
HL 39.6 |
electronic and optical properties of hexagonal germanium: influence of echange and correlation — •valerio armuzza, jürgen furthmüller, claudia rödl, friedhelm bechstedt, and silvana botti
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12:30 |
HL 39.7 |
Phase separation in metastable Ge1−xSnx epilayers induced by free running Sn precipitates — •Heiko Groiss, Martin Glaser, Magdalena Schatzl, Moritz Brehm, Dagmar Gerthsen, and Friedrich Schäffler
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12:45 |
HL 39.8 |
High-resolution patterning of germanium for nanoelectronics applications — Anushka S. Gangnaik, Muhammad Bilal Khan, Shima J. Ghamsari, Lars Rebohle, Artur Erbe, Justin D. Holmes, and •Yordan M. Georgiev
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