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HL: Fachverband Halbleiterphysik

HL 4: Quantum dots and wires: Optical properties I

HL 4.12: Vortrag

Montag, 12. März 2018, 12:30–12:45, EW 201

1550 nm wavelength emitting quantum dots, grown on a strain reduced InGaAs matrix — •Marcel Schmidt, Tim Bergmeier, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

An important milestone to quantum information transfer are single photon sources emitting at a wavelength of 1550 nm for low losses in optical fibres. To achieve an emission at 1550 nm, self assembled quantum dots (SAQDs) as nearly ideal single photon sources are very promising. With the tempting prospect to tune the energy levels of QDs to an emission wavelength of 1550 nm, we investigate molecular beam epitaxy grown InAs SAQDs on lattice mismatch reduced, relaxed InGaAs/InAlAs heterostructure layers with short period superlattices. We present first results of SAQDs already emitting at 1550 nm in photoluminescence spectroscopy at the temperature of T = 77 K.