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HL: Fachverband Halbleiterphysik

HL 4: Quantum dots and wires: Optical properties I

HL 4.1: Vortrag

Montag, 12. März 2018, 09:30–09:45, EW 201

Temperature-dependent investigations of the emission properties of InAs/InGaAs quantum dots in the telecom C-band — •Cornelius Nawrath, Fabian Olbrich, Matthias Paul, Simone Luca Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart

Over the last decades quantum dots (QDs) have proven to be promising candidates as single-photon emitters for applications like quantum computing and quantum communication. The prerequisites for this perspective, namely entangled photon generation and high indistinguishability have been shown to be feasible.

In the past, research has focused on QDs emitting around 900nm. For long-distance applications, however, emission around 1550nm (telecom C-band) is preferable, due to the global absorption minimum of the existing fiber network.

This talk presents recent progress for InAs QDs on a GaAs substrate using a metamorphic buffer. Their temperature stability is investigated by means of ensemble photoluminescence (PL) and µPL measurements. The thermal activation of charge carriers of the QD ensemble and the single dots is monitored. Furthermore, the individual behaviour of certain transitions is explored, pointing towards the presence of charge carrier traps in the vincinity of the QDs. Ultimately the single-photon nature of the emission is shown up to 77K and the different emission lines are identified.