Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 40: II-VI semiconductors
HL 40.3: Talk
Thursday, March 15, 2018, 11:30–11:45, EW 201
Electrical transport characteristics of implanted and epitaxially doped n-type ZnSe — •Johanna Janßen1, Torsten Rieger1, Arne Hollmann2, Felix Hartz2, Christian Kamphausen2, Lars Schreiber2, Detlev Grützmacher1, and Alexander Pawlis1 — 1Peter Grünberg Institute 9 and JARA - FIT, Forschungszentrum Jülich GmbH, Germany — 2JARA - Institute for Quantum Information, RWTH Aachen University, Germany
The reduced electron-nuclear interaction in isotopically purified ZnSe favorites this material towards the realization of electrostatically defined electron spin qubits with advanced coherence features. A prerequisite for such devices is the preparation of a 2D electron gas (2DEG) by fabricating ZnSe/(Zn,Mg)Se QW structures. To electrically contact the 2DEG, localized n-type doping of the (Zn,Mg)Se layer beneath the metal contacts is required. This is achieved either via ion implantation or by local epitaxial doping. While implantation causes defects, local epitaxial doping involves complex selective growth techniques. Consequently, fabrication of metal contacts on n-ZnSe with low contact resistance and ohmic behavior still remains a major challenge, especially at low temperatures. Here, we compare the transport characteristics of implanted and epitaxially doped ZnSe/(Zn,Mg)Se heterostructures. Different donor species and contact metals were investigated to identify the most promising device properties. Finally, we studied the gate-controlled transport characteristics at low temperatures. Our developed device structure represents a major step towards the realization of electrically controlled ZnSe based electron spin qubits.