Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 42: Transport
HL 42.4: Talk
Thursday, March 15, 2018, 15:45–16:00, EW 015
Magnetotransport in narrow-gap semiconductor nanostructures — •Olivio Chiatti1, Christian Riha1, Johannes Boy1, Aron Castro Martinez1, Sergio Pezzini2, Steffen Wiedmann2, Christian Heyn3, Wolfgang Hansen3, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 12489 Berlin, Germany — 2High Field Magnet Laboratory, Radboud University Nijmegen, 6525ED Nijmegen, The Netherlands — 3Institut für Angewandte Physik, Universität Hamburg, 20355 Hamburg, Germany
Electric transport measurements in magnetic fields are powerful tools to investigate the transport properties of low-dimensional electron systems.
Our experimental work has been directed at the magnetotransport in semiconductor heterostructures and nanostructures with spin-orbit interaction (SOI), under the influence of in-plane and out-of-plane electric fields.
We have combined quantum point contacts (QPCs) with in-plane gates, and Hall-bars with top- and back-gates in a narrow-gap semiconductor heterostructure with strong SOI.
The Hall-bars and the constriction were fabricated by micro-laser photolithography and wet-chemical etching from an InGaAs/InAlAs quantum well with an InAs-inserted channel [1].
We have performed transport measurements at low temperatures in the QPC and Hall-bar structures in magnetic fields.
We observe the transition from reflection to transmission of the quantum Hall edge channels at the QPC.
[1] Chiatti et al., Appl. Phys. Lett. 106, 052102 (2015).