Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Focussed Session: Frontiers in Laser Diode Physics II

HL 44.2: Invited Talk

Thursday, March 15, 2018, 15:30–16:00, EW 202

Semiconductor Nanolasers Based on 2D Monolayer of Transition Metal Dichalcogenides — •Cun-Zheng Ning — Department of Electronic Engineering, Tsinghua University, and School of Electrical, Computer & Energy Engineering, Arizona State University

This talk will begin with a brief review of the major progress in semiconductor nanolasers over the last decade and the potential applications of such nanolasers in the future integrated nanophotonic chips. The first part of the talk will be on semiconductor nanolasers with surface-plasmonic confinement mechanisms, including discussions of merits and major problems of plasmonics in metallic structures. The focus of the talk will be on the more recent progress in semiconductor nanolasers using a 2D monolayer of transition metal dichalcogenides as optical gain medium, potentially the thinnest gain medium possible. We will show some remarkable results of integrating a silicon nanobeam cavity structure with a monolayer of molybdenum ditelluride, demonstrating room temperature lasing in continuous wave mode for the first time. Concluding remarks and future perspectives will be provided towards the end of presentation.