Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 5: Semiconductor Lasers
HL 5.2: Vortrag
Montag, 12. März 2018, 09:45–10:00, EW 202
Influence of spontaneous emission on the coherence properties of high-β semiconductor nanolasers — •Frederik Lohof1, Roy Barzel1, Paul Gartner2, and Christopher Gies1 — 1Institute for Theoretical Physics, University of Bremen, Bremen, Germany — 2National Institute of Material Physics, Bucharest-Magurele, Romania
Nanolasers, often operating in the high-β regime, are one of the prime applications of cavity-QED promising ultra-low thresholds and driving research in the field of green photonics. However, in such lasers spontaneous emission can play a central role even above the threshold, thereby influencing the coherence properties of the emitted light. In this context, we revisit the lasing criterion in terms of the degree of coherence of the emission inprinted in the two photon correlation function g(2). Using theoretical models we demonstrate that there are new regimes of cavity-QED lasing, realized e.g. in nanolasers with extended gain material, for which the coherence is reached at higher pump powers than required to observe the laser intensity jump, normally associated with the laser threshold. We present results from a photonic crystal nanobeam cavity laser with nitride-based quantum well gain material, operating in the mentioned new regime where g(2) becomes essential to identify lasing in the system.