Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 5: Semiconductor Lasers

HL 5.4: Talk

Monday, March 12, 2018, 10:15–10:30, EW 202

Carrier dynamics and modulation properties in tunnel-injection based quantum-dot structures — •Michael Lorke, Stephan Michael, and Frank Jahnke — Institute für theoretische Physik, Universität Bremen

For tunnel-injection (TI) quantum-dot (QD) lasers record high small signal modulation bandwidth and improved performance of 1.55 µm InAs QDs on InP-based hetero-structures (1) were reported, which underscores their application potential for high-speed optical communication networks. We present a theoretical analysis of TI laser devices by combining material realistic electronic structure calculations with a many-body description of the carrier dynamics and the modulation properties. Based on these investigations, we give design guidelines to optimize the modulation bandwidth and turn-on delay.

(1) S. Bhowmick, M. Z. Baten, T. Frost, B. S. Ooi, and P. Bhattacharya, IEEE JQE 50, NO. 1 7-14 (2014)