Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 5: Semiconductor Lasers

HL 5.8: Vortrag

Montag, 12. März 2018, 11:30–11:45, EW 202

Remarkable laser emission around 630nm via a vertical cavity surface emitting laser (VCSEL) based on InP quantum dot layers — •Isabel Reis, Mona Stadler, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart

VCSELs in the AlGaInP material system are ideal candidates to realize a miniaturized optical device for laser emission around 630 nm capable to integrate. Such a development will be a suitable alternative to the best-known and successful emitter at 633nm, the HeNe laser. Furthermore, the realization of single-mode VCSELs comes with the ability of easy fiber coupling and array fabrication. We have carried out devices with an emission wavelength at 630 nm by combining structural design and adjusted growth parameters. Particular attention was devoted to the active region, which consists either of stacked InP quantum dot (QD) layers or quantum wells (QW) within a barrier and cladding layer of Al0.33GaInP and Al0.55GaInP, respectively. The advantage of QD based VCSEL compared to QW based devices is the decreased threshold current with less temperature dependency, an improved gain and tunability of the emission wavelength. The results of specific examples emitting around 630 nm will be presented, in both their designs and experimental behavior. Especially, the output power in the continuous wave and pulsed operation, the lasing characteristics and spectra of our processed VCSEL are measured and evaluated.