Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.14: Poster
Donnerstag, 15. März 2018, 19:00–21:00, Poster B
Topological spintronic devices based on BiSbTeSe2 flakes — •Patrick Janoschka, Fan Yang, Zhiwei Wang, Alexey Taskin, and Yoichi Ando — Institute of Physics II, University of Cologne
Topological insulators belong to a new class of quantum materials in which a strong spin-orbit coupling leads to a band inversion and therefore, to gapless surface states with helical spin texture. Due to the spin-momentum locking, the topological surface states are promising for spintronic applications.
A big obstacle in spintronic-device fabrication is to reach a high spin-polarization detection efficiency. Because of the conductivity mismatch between the topological insulator and the ferromagnetic (FM) spin detector, the detection efficiency is usually low.
In this poster we present the approach of solving the conductivity mismatch with an Al2O3 tunnel barrier grown by atomic layer deposition (ALD) between the BiSbTeSe2 flake and the FM spin detector. With this technique we are able to reach a spin-polarization detection efficiency of up to 36% and the current-induced spin polarization was reproducibly observed in many devices.