Berlin 2018 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.22: Poster
Thursday, March 15, 2018, 19:00–21:00, Poster B
Chemical and structural defects in magnetically doped topological insulators — •Jakub Šebesta, Pavel Baláž, and Karel Carva — Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5 121 16 Praha 2, Czech Republic
The basic way to change physical properties of TI consists in doping the compound by magnetic atoms, which disturbs by magnetic field the time-reversal symmetry guaranteed uncommon surface properties. Besides, the non negligible influence on conductive surface states rests in the presence of defects of crystal structure, e.g. point defects, stacking faults, twinning planes which appear in real conditions [1]. The aim of the work is studying physical properties of TI under the influence of the above mentioned structural defects and magnetic atoms in well known bismuth chalcogenides as Bi2Se3 or Bi2Te3 [2], using electronic structure calculation and the simulations of the magnetization dynamic. Ab-initio calculations based on layered TB-LMTO+CPA method have been employed to obtain the dependence of surface states, energetic gap or magnitudes of exchange interactions on presented defects. Furthermore we used the results from ab-initio calculation to simulate the magnetic behavior of magnetic atoms in non-zero temperatures, where we calculated ordering temperatures of magnetically doped compounds. The obtained results are compared with experimental results as well.
[1] D. Kriegner et al.,J.Appl.Cryst. 50 (2017), 369-377.
[2] K. Carva et al., Phys.Rev.B 93 (2016), 214409.