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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.23: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Geometry and electronic structure of the antimonene/Bi2Se3 interface — •Conor Hogan¹, Kris Holtgrewe², Simone Sanna², Roberto Flammini¹, Stefano Colonna¹, Fabio Ronci¹, Sanjoy Mahatha^3,4, Paolo Moras³, Polina Sheverdyaeva³, Alessandro Barla³, Marco Papagno⁵, Z. S. Aliev⁶, E. V. Chulkov⁷, and Carlo Carbone³ — ¹CNR-ISM, Rome, Italy — ²University of Giessen, Germany — ³CNR-ISM, Trieste, Italy — ⁴University of Aarhus, Denmark — ⁵University of Calabria, Italy — ⁶Azerbaijan National Academy of Science, Baku, Azerbaijan — ⁷DIPC, San Sebastian, Spain

The interface between the 2D trivial semiconductor antimonene (Sb-ene) and the 3D topological insulator Bi2Se3 has attracted much interest due to its potential for exploiting the proximity effect. We report a joint theoretical-experimental study of the growth and electronic properties of single/multilayered Sb-enes on Bi2Se3. STM measurements show the presence of ordered domains displaying a perfect lattice match with bismuth selenide. Ab initio DFT calculations of the most stable atomic configurations demonstrate that the ordered domains can be attributed to stacks of single or double bilayers of buckled antimonene sheets. ARPES of the clean Bi2Se3 surface and Sb-ene interfaces, coupled with spin polarization analyses of the computed band structures, yield clear interpretations of the measured spectra in terms of topological surface states, confirming that Sb/Bi2Se3 is an ideal model system for investigating the unique physical topological and emergent phenomena at such heterostructures.