Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.24: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Selective area grown ZnTe nanowires as the basis for a quasi-one-dimensional realization of the Topological Insulator HgTe — •Jan Hajer, Willi Mantei, Maximilian Kessel, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp — Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

In this work, we present a successful approach to selective area molecular beam epitaxy of ZnTe nanowires. The wires obtained serve as a substrate for radial overgrowth with different II-VI materials, allowing for the realization of quasi-one-dimensional CdTe-HgTe nanowire shells. The full position control due to patterning of the growth seed not only guarantees a homogeneous environment for overgrowth, but also opens up the possibility for designing high quality bottom-up grown Topological Insulator networks.