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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.33: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Mid- to far-infrared localized surface plasmon resonance in chalcogen-hyperdoped Si — •Mao Wang^1,2, Slawomir Prucnal¹, Yonder Berencén¹, Lars Rebohle¹, Tommy Schönherr¹, Ye Yuan^1,2, Chi Xu^1,2, Muhammad Bilal Khan¹, Roman Böttger¹, Wolfgang Skorupa¹, Manfred Helm^1,2, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany — ²Technische Universität Dresden, 01062 Dresden, Germany

Mid-infrared plasmonic sensing allows the direct targeting of molecules relevance in the so-called *vibrational fingerprint region*. Presently, heavily doped semiconductors exhibiting the potential to replace and outperform metals in the mid- infrared frequency range to revolutionize plasmonic devices. In this work, we demonstrate the occurrence of localized surface plasmon resonances (LSPR) in Te heavily-doped Si layers developed by ion implantation combined with flash lamp annealing. We fabricate micrometer-sized antennas out of the Te-hyperdoped Si layers by electron-beam lithography and reactive ion etching processes. The optical response characterized by Fourier-transform infrared (FTIR) spectroscopy demonstrates the enhancement of localized plasmon resonances in antennas, from mid- to far- infrared frequency range. Our results set a new path toward integration of plasmonic sensors with the one-chip CMOS platform.