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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.37: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Controlled Nickel Silicidation of Silicon Nanowires for Fabrication of Reconfigurable Field Effect Transistors — •Muhammad Bilal Khan¹, Dipjyoti Deb¹, Slawomir Prucnal¹, Mathias Voelskow¹, Artur Erbe¹, and Yordan M. Georgiev^1,2 — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, 01328 Dresden, Germany — ²On leave of absence from the Institute of Electronics at the Bulgarian Academy of Sciences, 72, Tsarigradskochausseeblvd., Sofia 1784, Bulgaria

Physical scaling down of field effect transistors (FET) is reaching its end. To meet the consistent demand for faster, smaller and energy efficient transistors, new concepts which include new materials, new architectures, new computation principles and enhanced functionality are under research. The aim of this work is to fabricate devices with enhanced functionality, the so called reconfigurable FET (RFET) which can be configured as p- or n-channel FET. The RFETs are realised by fabricating silicon nanowires (SiNWs) on Si on insulator (SOI) substrates. These NWs are subsequently nickel silicided at both ends to form Si-NiSi₂-Si Schottky junctions. Control over silicide length is important to scale down the Si channel and to have symmetric contacts on both sides of the nanowires. The focus of our recent work is to achieve this control by using flash lamp annealing (FLA). Comparison between silicidation with flash lamp annealing (FLA) and rapid thermal annealing (RTA) along with the resulting electrical characteristics of these devices will be presented at the conference.