Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.38: Poster
Thursday, March 15, 2018, 19:00–21:00, Poster B
Top-down fabrication of sub-20 nm germanium nanowires for nanoelectronics and photonics applications — •Shim Jazavandi Ghamsari1, Muhammad Bilal Khan1, Lars Rebohle1, Arthur Erbe1, and Yordan M. Georgiev1,2 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Institute of Electronics at the Bulgarian Academy of Sciences, 72, Tsarigradsko chaussee blvd., Sofia 1784, Bulgaria
High-mobility channel materials are one of the recent performance boosters in the roadmap of semiconductor industry. Germanium(Ge) is among the materials that are nominated for future nanoelectronic devices beside silicon (Si).However, the chemical characteristics of Ge native oxide are a matter of concern in fabrication processes, especially at nanoscale. To produce Ge nanostructures of sub-20 nm size using electron beam lithography (EBL) with hydrogen silsesquioxane (HSQ) as a negative tone EBL resist, it is imperative to remove the Ge native oxide and passivate the Ge surface. In this poster we will present a fast and simple method to clean and passivate the Ge surface, which uses only non-hazardous household acids such as citric and acetic acids.The method improves the adhesion of HSQ to the substrate and allows to effectively avoid lifting off the HSQ nanostructures. With this method, sub-20 nm Ge nanowires can be fabricated, which will be used to develop a technology for doping Ge nanostructures by ion implantation and flash lamp annealing with outlook to possible nanoelectronics and photonics applications.