Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.53: Poster
Thursday, March 15, 2018, 19:00–21:00, Poster B
Shubnikov-de Haas studies on Gallium Nitride / Aluminum Gallium Nitride Heterostructures for High-electron-mobility transistors — •Raphael Müller1, Sebastian Bauer1, Manfred Madel2, Hervé Blanck2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University — 2United Monolithic Semiconductors GmbH/ Ulm
Key parameters for High-electron-mobility transistors (HEMTs) are the electron mobility and sheet carrier density in the 2-dimensional electron gas forming at the n-type heterointerface. On GaN/AlGaN heterostructures with and w/o an additional AlN interlayer, these properties were analyzed in detail by low-temperature Shubnikov-de Haas and Hall measurements in magnetic fields up to 15 T.
With the presented results it is shown, that the AlN interlayer has a positive influence on several key parameters of the Heterostructure, due to the additional polarization field and the enlarged effective conduction band offset. We show that the carrier concentration, mobility, classical scattering time and quantum mechanical scattering time can be increased by adding this AlN interlayer, with positive influence on the performance of HEMTs.