Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.55: Poster

Thursday, March 15, 2018, 19:00–21:00, Poster B

Growth of Na-doped SnSe single crystals — •Yannik Bartlock, Marius Peters, Kristin Kliemt, and Cornelius Krellner — Physikalisches Insitut, Goethe-Universität Frankfurt am Main, D-60438 Frankfurt

Single crystalline tin-selenid has proven to be an excellent thermoelectric material, since new studies have shown that the figure of merit of hole doped SnSe is above 1 [1]. The large figure of merit arises mainly from a huge increase of the power factor, e.g. an increase of the electrical resistivity and the thermopower. This work presents the single crystal growth of tin-selenid and various Na-doped tin-selenid compounds via vertical Bridgman method. The samples were analyzed with x-ray diffraction and probed by van de Pauw measurements to investigate the influence of the Na-doping on the density and the mobility of the charge carriers.
L.-D. Zhao et al., Science 351, 141 (2016)