Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.57: Poster

Thursday, March 15, 2018, 19:00–21:00, Poster B

Subomonlayers as novel gain medium in opto-electronic devices — •Fuad Alhussein¹, Bastian Herzog¹, Benjamin Lingnau², Mirco Kolarczik¹, Sophia Helmrich¹, David Quandt³, Udo Pohl³, André Strittmatter⁴, Olaf Brox⁵, Markus Weyers⁵, Ulrike Woggon¹, Kathy Lüdge², and Nina Owschimikow¹ — ¹Institut für Optik und atomare Physik, Technische Universität Berlin — ²Institut für theoretische Physik, Technische Universität Berlin — ³Institut für Festkörperphysik, Technische Universität Berlin — ⁴Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg — ⁵Ferdinand Braun Institut, Leibniz Institut für Hüchstfrequenztechnik Berlin

For lasers and optical amplifiers the gain provided by the active region along with the line width and energy of the emitted light are important features. For many applications a broad emission spectrum is desired, such as it is produced by self-assembled quantum dots. The submonolayer growth method produces dense In-rich islands within a GaAs matrix, with a density of localization centers exceeding the density of quantum dots by an order of magnitude. We compare the properties of optical amplifiers and lasers with quantum dots, submonolayers and single quantum wells emitting at the optical band of 1060 nm. Our devices reach a peak net modal gain of 9, 25 and 28 cm⁽⁻¹⁾ per layer on a 3 dB bandwidth of 60, 38 and 7 meV and a lasing threshold of 1.5, 0.75 and 0.23 kA cm⁽⁻²⁾, respectively.