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HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.8: Poster
Donnerstag, 15. März 2018, 19:00–21:00, Poster B
Droplet epitaxy growth and characterization of InAs QDs — •David Fricker1,3, Zheng Zeng1,3, Detlev Grützmacher1,2,3, Mihail Ion Lepsa2,3, and Beata Kardynal1,3 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, Germany — 2Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich, Germany — 3JARA - Fundamentals of Future Information Technology, RWTH Aachen University, Germany
Self-assembled InAs quantum dots have been successfully applied in a number of devices for quantum information processing and communication, starting from single photon emitters and detectors to spin-photon interfaces. Droplet epitaxy represents an interesting alternative to the well -known Stranski-Krastanow growth mode of QDs permitting a high degree of control over the shape, size and density and avoiding the wetting layer which can be detrimental for spin-photon interfaces. Here, we report on the MBE growth of InAs QDs using droplet epitaxy method. The InAs QDs have been grown on GaAs (100) substrates. We have investigated the growth conditions for optimum size and density of the QDs. Their morphological and structural characteristics have been obtained using different microscopy methods. Preliminary results regarding optical characterization will be presented as well.