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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.9: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Effects of crystal annealing on the spin coherence time in silicon carbide — •Daniel Klenkert¹, Christian Kasper¹, Georgy V. Astakhov¹, Ingo Lederer², and Vladimir Dyakonov^1,2 — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg

The silicon vaccancy defect (V_Si) in silicon carbide (SiC) has recently emerged as a topic of research interest because of its coherent properties. The V_Si center forms a S=3/2 system, which can be extensivly controlled by infrared and microwave radiation. Additonally, the V_Si defect shows spin coherence times on the order of several hundred microseconds at room temperature. Therefore the use of this defect in quantum sensing and quantum computing applications seems realistic. The defects are usually created by irradiation, which in turn impairs the coherent properties.
In this study, we examine the effects of crystal annealing on the spin-lattice relaxation time T₁ and the spin-spin relaxation time T₂ of the V_Si defect. The silicon vaccancy is stable and, in contrast to some other crystal defects, can only be anneald at high temperatures. This gives rise to the hope, that annealing at lower temperatures yields a better orderd crystal with longer coherence times.