Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: 2D Materials: Session III (joint session DS/CPP/HL)

HL 51.9: Vortrag

Freitag, 16. März 2018, 12:00–12:15, H 2032

Pulsed Laser Deposition of Monolayer WSe₂ — •Avaise Mohammed¹, Hiroyuki Nakamura¹, Peter Wochner¹, Shyjumon Ibrahimkutty¹, Armin Schulz¹, Kathrin Müller¹, Krystian Nowakowski², Keita Matsuda³, Johannes Geurs¹, Yijin Zhang¹, Mona Stadler⁴, Kenji Watanabe⁵, Takashi Taniguchi⁵, Benjamin Stuhlhofer¹, Georg Cristiani¹, Gennady Logvenov¹, Michael Jetter⁴, Peter Michler⁴, Jurgen Smet¹, Ulrich Starke¹, and Hidenori Takagi^1,6 — ¹MPI-FKF — ²University of Twente — ³Nagoya University — ⁴IHFG, University of Stuttgart — ⁵NIMS — ⁶IFMQ, University of Stuttgart

Ultrathin WSe₂ films were deposited using a custom built hybrid-Pulsed Laser Deposition (PLD) system on different substrates. Raman spectroscopy and atomic force microscopy were used to identify the monolayer (ML) WSe₂. Synchrotron based grazing incidence X-ray diffraction revealed WSe₂ films to have a compressive strain on Al₂O₃ r-cut substrates. Angle resolved photoelectron spectroscopy confirmed the valance band structure of ML WSe₂ on epitaxial graphene with a clear spin splitting of 480 meV. Photoluminescence signal was identified from ML WSe₂ deposited on hexagonal BN. The results give evidence for PLD to be an excellent approach for the growth of monolayer transition metal chalcogenides.