Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 54: Organic semiconductors

HL 54.6: Vortrag

Freitag, 16. März 2018, 11:00–11:15, EW 203

Doping-induced Optimization of Organic Field Effect Transistors — •Marc-Michael Barf^1,2, Christian Willig^1,2,3, Robert Lovrincic^1,2, and Wolfgang Kowalsky^1,2,3 — ¹IHF, TU Braunschweig — ²InnovationLab, Heidelberg — ³KIP, Heidelberg University

Doping of organic semiconductors has become a common method to improve the efficiency of devices like organic light emitting diodes, organic solar cells and more recently also organic field effect transistors (OFETs). By increasing conductivity or creating space charge regions charge transport within such can be enhanced. Here, metal oxides are used to optimize charge carrier injection in p-type OFETs. Through the implementation of molybdenum oxide layers, it was possible to fabricate OFETs consisting of the polymer Poly[[(2,4-dimethylphenyl)imino]-1,4-phenylene(6,12-dihydro-6,6,12,12-tetraoctylindeno[1,2-b]fluorene-2,8-diyl)-1,4-phenylene] (PIF8-TAA) which are, to the best of our knowledge, the first of their kind that can be operated with silver contacts. This paves the way towards all-solution-processed devices. n-type OFETs were optimized using small molecules as dopants. The performance of OFETs consisting of the polymer Poly([N,N*-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5*-(2,2*-bithiophene)) (N2200) could be improved significantly through a contact treatment with derivatives of 1,3-Dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (DMBI).