Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 55: Quantum dots and wires: Preparation and characterization

HL 55.12: Talk

Friday, March 16, 2018, 12:30–12:45, A 151

Investigation of Bi induced three-dimensional InAs nanostructures on GaAs(110) by cross-sectional scanning tunnelling microscopy. — •Wjatscheslav Martyanov¹, Ryan B. Lewis², Hendrik Janssen¹, Celina S. Schulze¹, Pascal Farin¹, Andrea Lenz¹, Mario Dähne¹, Lutz Geelhaar², and Holger Eisele¹ — ¹Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — ²Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

While on GaAs(100) three-dimensional (3D) growth of InAs is preferred, on other low-index GaAs surfaces such as (110) and (111) the deposition always results in a two-dimensional growth. On the other hand, the growth of 3D nanostructures like quantum dots on these surfaces is of interest for high efficiency single photon sources. Recent investigations show that the presence of Bi as a surfactant induces 3D growth on GaAs(110) by modifying the surface energy. In this contribution Bi induced InAs 3D islands formed within InAs monolayers on GaAs(110) are investigated by cross-sectional scanning tunneling microscopy (XSTM). The XSTM images allow the characterization of these structures in terms of size, density, and atomic structure depending on Bi exposure time. In order to explore the influence of Bi, we compare XSTM images of InAs monolayers deposited both with and without the presence of a Bi flux, and InAs monolayers subsequently exposed to Bi for different durations. This work was supported by the DFG, SFB 787, Project A4.