Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 55: Quantum dots and wires: Preparation and characterization
HL 55.5: Vortrag
Freitag, 16. März 2018, 10:30–10:45, A 151
Self-catalysed MBE-grown III-V nanowire arrays on Si(111) substrates — •Pujitha Perla1,3, Dinesh Arumugam1,3, Lidia Kibkalo1,3, Patrick Zellekens1,3, Torsten Rieger1,3, Thomas Schäpers1,3, Detlev Grützmacher1,2,3, and Mihail Ion Lepsa2,3 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich, — 2Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich — 3JARA - Fundamentals of Future Information Technology
III-V semiconductor nanowires (NWs) are interesting for studying new quantum transport phenomena. The selective growth in arrays on Silicon (Si) substrates offer the advantages of growth parameter optimization and easier integration of the processed NW devices. Here we report on the self-catalysed growth of InAs and GaAs NW arrays by molecular beam epitaxy (MBE) on Si(111) substrates.
For the growth of the NW arrays,hole patterns have been processed by e-beam lithography,dry and wet chemical etching on SiO2 on Si(111) substrates. We have observed that the substrate preparation is critical, especially for the growth GaAs NWs. For the growth of InAs and GaAs NW arrays, vapour-solid and vapour-liquid-solid growth modes have been used respectively. The influence of Te-doping on the morphology of InAs NWs was studied as well. The growth results have been analysed for the yield and morphology of vertical NWs using scanning electron microscopy. These results further increase the scope for evaluation of the Te-doping of the InAs NWs and the growth of advanced core-shell NW arrays with Sb based shell materials.