Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 55: Quantum dots and wires: Preparation and characterization
HL 55.8: Vortrag
Freitag, 16. März 2018, 11:30–11:45, A 151
Epitaxial Growth and Characterization of low-density InGaAs Quantum Dots for Single-Photon Emission at 1300 nm — •Jan Große, Nicole Srocka, Tobias Heindel, and Stephan Reitzenstein — Technische Universität Berlin, Institute for Solid State Physics, Hardenbergstraße 36, 10623 Berlin, Germany
Quantum dots are widely known as promising sources for single photons, which in turn enables a large variety of photonic applications from quantum cryptography to quantum computing. In(Ga)As/GaAs quantum dots grown by metal organic chemical vapour deposition (MOCVD) have been proven to emit single photons over a widely tuneable spectral range. Moreover they allow for a relatively easy monolithic integration in photonic cavities using lattice matched AlGaAs/GaAs DBR mirrors.
Here we tackle the challenge to grow InGaAs quantum dots for single-photon emission at the telecom O-Band around 1300 nm. The spectral shift of the quantum dot emission wavelength is achieved by introducing a strain reducing InGaAs layer [1] with an indium content of approximately 25 % immediately after the growth of the quantum dot layer, tailored to yield a dot density of about 5 × 107 cm−2.
We present micro-photoluminescence and atomic force measurements for the characterization of the quantum dots. Moreover, we show deterministic device integration and discuss preliminary results of optical characterization measurements.
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